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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RJK0603DPN-E0#T2

RJK0603DPN-E0#T2

RJK0603DPN-E0#T2
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Part Number RJK0603DPN-E0#T2
Manufacturer Renesas Electronics America
Description MOSFET N-CH 60V 80A TO220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4737 pcs
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Part Number RJK0603DPN-E0#T2 Manufacturer Renesas Electronics America
Description MOSFET N-CH 60V 80A TO220 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4737 pcs Data sheet RJK0603DPN-E0#T2
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id -
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB Series -
Rds On (Max) @ Id, Vgs 5.2 mOhm @ 40A, 10V Power Dissipation (Max) 125W (Tc)
Packaging Tube Package / Case TO-220-3
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 10V Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 80A (Ta) 125W (Tc) Through Hole TO-220AB Current - Continuous Drain (Id) @ 25°C 80A (Ta)

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