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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RJH65D27BDPQ-A0#T2

RJH65D27BDPQ-A0#T2

RJH65D27BDPQ-A0#T2
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Part Number RJH65D27BDPQ-A0#T2
Manufacturer Renesas Electronics America
Description IGBT TRENCH 650V 100A TO247A
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4917 pcs
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Part Number RJH65D27BDPQ-A0#T2 Manufacturer Renesas Electronics America
Description IGBT TRENCH 650V 100A TO247A Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4917 pcs Data sheet RJH65D27BDPQ-A0
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 50A Test Condition 400V, 50A, 10 Ohm, 15V
Td (on/off) @ 25°C 20ns/165ns Switching Energy 1mJ (on), 1.5mJ (off)
Supplier Device Package TO-247A Series -
Reverse Recovery Time (trr) 80ns Power - Max 375W
Packaging Tube Package / Case TO-247-3
Operating Temperature 175°C (TJ) Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Type Standard
IGBT Type Trench Gate Charge 175nC
Detailed Description IGBT Trench 650V 100A 375W Through Hole TO-247A Current - Collector (Ic) (Max) 100A

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