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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RJH1CV7DPQ-E0#T2

RJH1CV7DPQ-E0#T2

RJH1CV7DPQ-E0#T2

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Part Number	RJH1CV7DPQ-E0#T2
Manufacturer	Renesas Electronics America
Description	IGBT 1200V 70A 320W TO247
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5419 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	RJH1CV7DPQ-E0#T2	Manufacturer	Renesas Electronics America
Description	IGBT 1200V 70A 320W TO247	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5419 pcs	Data sheet	RJH1CV7DPQ-E0#T2
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	1200V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 35A	Test Condition	600V, 35A, 5 Ohm, 15V
Td (on/off) @ 25°C	53ns/185ns	Switching Energy	3.2mJ (on), 2.5mJ (off)
Supplier Device Package	TO-247	Series	-
Reverse Recovery Time (trr)	200ns	Power - Max	320W
Packaging	Tube	Package / Case	TO-247-3
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Type	Standard	IGBT Type	Trench
Gate Charge	166nC	Detailed Description	IGBT Trench 1200V 70A 320W Through Hole TO-247
Current - Collector (Ic) (Max)	70A

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