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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > UNR51A2G0L

UNR51A2G0L

UNR51A2G0L
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Part Number UNR51A2G0L
Manufacturer Panasonic
Description TRANS PREBIAS PNP 150MW SMINI3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4859 pcs
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Part Number UNR51A2G0L Manufacturer Panasonic
Description TRANS PREBIAS PNP 150MW SMINI3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4859 pcs Data sheet UNR51A2G
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type PNP - Pre-Biased
Supplier Device Package SMini3-F2 Series -
Resistor - Emitter Base (R2) 22 kOhms Resistor - Base (R1) 22 kOhms
Power - Max 150mW Packaging Cut Tape (CT)
Package / Case SC-85 Other Names UNR51A2G0LCT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 80MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 80mA 80MHz 150mW Surface Mount SMini3-F2 DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 80mA

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