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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > UNR412100A

UNR412100A

UNR412100A
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Part Number UNR412100A
Manufacturer Panasonic
Description TRANS PREBIAS PNP 300MW NS-B1
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5304 pcs
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Product parameter

Part Number UNR412100A Manufacturer Panasonic
Description TRANS PREBIAS PNP 300MW NS-B1 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5304 pcs Data sheet UNR412x Series
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA Transistor Type PNP - Pre-Biased
Supplier Device Package NS-B1 Series -
Resistor - Emitter Base (R2) 2.2 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 300mW Packaging Tape & Box (TB)
Package / Case 3-SSIP Other Names UNR412100ATB
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 300mW Through Hole NS-B1 DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 100mA, 10V
Current - Collector Cutoff (Max) 1µA Current - Collector (Ic) (Max) 500mA

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