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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DRA5115G0L

DRA5115G0L

DRA5115G0L
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number DRA5115G0L
Manufacturer Panasonic
Description TRANS PREBIAS PNP 150MW SMINI3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1105050 pcs
Reference Price
(In US Dollars)
3000 pcs6000 pcs15000 pcs30000 pcs75000 pcs
$0.031$0.029$0.026$0.025$0.023

Submit a Request For Quotation on quantities greater than those displayed.

Target Price:(USD)
Quantity:
Total:
$0.031

Product parameter

Part Number DRA5115G0L Manufacturer Panasonic
Description TRANS PREBIAS PNP 150MW SMINI3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1105050 pcs Data sheet DRA5115G0L
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA Transistor Type PNP - Pre-Biased
Supplier Device Package SMini3-F2-B Series -
Resistor - Emitter Base (R2) 100 kOhms Power - Max 150mW
Packaging Tape & Reel (TR) Package / Case SC-85
Other Names DRA5115G0L-ND
DRA5115G0LTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 11 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount SMini3-F2-B
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number DRA5115

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