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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PSMN8R5-108ESQ

PSMN8R5-108ESQ

PSMN8R5-108ESQ
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Part Number PSMN8R5-108ESQ
Manufacturer NXP Semiconductors / Freescale
Description MOSFET N-CH 108V 100A I2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5610 pcs
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Part Number PSMN8R5-108ESQ Manufacturer NXP Semiconductors / Freescale
Description MOSFET N-CH 108V 100A I2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5610 pcs Data sheet
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package I2PAK Series -
Rds On (Max) @ Id, Vgs 8.5 mOhm @ 25A, 10V Power Dissipation (Max) 263W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names 568-11432-5
934068134127
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 5512pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 111nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 108V Detailed Description N-Channel 108V 100A (Tj) 263W (Tc) Through Hole I2PAK
Current - Continuous Drain (Id) @ 25°C 100A (Tj)

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