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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTD123ES,126

PDTD123ES,126

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Part Number	PDTD123ES,126
Manufacturer	NXP Semiconductors / Freescale
Description	TRANS PREBIAS NPN 500MW TO92-3
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5593 pcs
Reference Price (In US Dollars)	Get a quote

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Product parameter

Part Number	PDTD123ES,126	Manufacturer	NXP Semiconductors / Freescale
Description	TRANS PREBIAS NPN 500MW TO92-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5593 pcs	Data sheet	PDTD123E Series
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA	Transistor Type	NPN - Pre-Biased
Supplier Device Package	TO-92-3	Series	-
Resistor - Emitter Base (R2)	2.2 kOhms	Resistor - Base (R1)	2.2 kOhms
Power - Max	500mW	Packaging	Tape & Box (TB)
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Other Names	934059143126 PDTD123ES AMO PDTD123ES AMO-ND
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	500mA	Base Part Number	PDTD123

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