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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTB113ES,126

PDTB113ES,126

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Part Number PDTB113ES,126
Manufacturer NXP Semiconductors / Freescale
Description TRANS PREBIAS PNP 500MW TO92-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4029 pcs
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Part Number PDTB113ES,126 Manufacturer NXP Semiconductors / Freescale
Description TRANS PREBIAS PNP 500MW TO92-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4029 pcs Data sheet PDTB113E
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Transistor Type PNP - Pre-Biased
Supplier Device Package TO-92-3 Series -
Resistor - Emitter Base (R2) 1 kOhms Resistor - Base (R1) 1 kOhms
Power - Max 500mW Packaging Tape & Box (TB)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Other Names 934059144126
PDTB113ES AMO
PDTB113ES AMO-ND
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 500mA Base Part Number PDTB113

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