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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > PBSS8110S,126

PBSS8110S,126

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Part Number	PBSS8110S,126
Manufacturer	NXP Semiconductors / Freescale
Description	TRANS NPN 100V 1A TO92
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4749 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	PBSS8110S,126	Manufacturer	NXP Semiconductors / Freescale
Description	TRANS NPN 100V 1A TO92	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4749 pcs	Data sheet	PBSS8110S
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	200mV @ 100mA, 1A	Transistor Type	NPN
Supplier Device Package	TO-92-3	Series	-
Power - Max	830mW	Packaging	Tape & Box (TB)
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Other Names	934057671126 PBSS8110S AMO PBSS8110S AMO-ND
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	100MHz	Detailed Description	Bipolar (BJT) Transistor NPN 100V 1A 100MHz 830mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 250mA, 10V	Current - Collector Cutoff (Max)	100nA
Current - Collector (Ic) (Max)	1A	Base Part Number	PBSS8110

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