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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PBRN113ES,126

PBRN113ES,126

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Part Number PBRN113ES,126
Manufacturer NXP Semiconductors / Freescale
Description TRANS PREBIAS NPN 0.7W TO92-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5815 pcs
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Part Number PBRN113ES,126 Manufacturer NXP Semiconductors / Freescale
Description TRANS PREBIAS NPN 0.7W TO92-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5815 pcs Data sheet PBRN113E Series
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA Transistor Type NPN - Pre-Biased
Supplier Device Package TO-92-3 Series -
Resistor - Emitter Base (R2) 1 kOhms Resistor - Base (R1) 1 kOhms
Power - Max 700mW Packaging Tape & Box (TB)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Other Names 934058999126
PBRN113ES AMO
PBRN113ES AMO-ND
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 800mA 700mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 300mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 800mA Base Part Number PBRN113

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