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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > JAN2N3810L

JAN2N3810L

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See Product Specifications for product details.
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Part Number JAN2N3810L
Manufacturer Microsemi
Description TRANS 2PNP 60V 0.05A TO78
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 3779 pcs
Reference Price
(In US Dollars)
100 pcs
$10.39

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Target Price:(USD)
Quantity:
Total:
$10.39

Product parameter

Part Number JAN2N3810L Manufacturer Microsemi
Description TRANS 2PNP 60V 0.05A TO78 Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 3779 pcs Data sheet 2N3810(L,U), 2N3811(L,U)
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA Transistor Type 2 PNP (Dual)
Supplier Device Package TO-78-6 Series Military, MIL-PRF-19500/336
Power - Max 350mW Packaging Bulk
Package / Case TO-78-6 Metal Can Other Names 1086-2358
1086-2358-MIL
Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 23 Weeks
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6 DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V
Current - Collector Cutoff (Max) 10µA (ICBO) Current - Collector (Ic) (Max) 50mA

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