JAN1N6622US
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See Product Specifications for product details.
Buy JAN1N6622US with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | JAN1N6622US |
|---|---|
| Manufacturer | Microsemi Corporation |
| Description | DIODE GEN PURP 660V 2A D5A |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
Product parameter
| Part Number | JAN1N6622US | Manufacturer | Microsemi Corporation |
|---|---|---|---|
| Description | DIODE GEN PURP 660V 2A D5A | Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Quantity Available | 4048 pcs | Data sheet | |
| Category | Discrete Semiconductor Products | Voltage - Peak Reverse (Max) | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1.2A | Voltage - Breakdown | D-5A |
| Series | Military, MIL-PRF-19500/585 | RoHS Status | Bulk |
| Reverse Recovery Time (trr) | Fast Recovery = 200mA (Io) | Resistance @ If, F | 10pF @ 10V, 1MHz |
| Polarization | SQ-MELF, A | Other Names | 1086-19963 1086-19963-MIL |
| Operating Temperature - Junction | 30ns | Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Part Number | JAN1N6622US |
| Expanded Description | Diode Standard 660V 1.2A Surface Mount D-5A | Diode Configuration | 500nA @ 660V |
| Description | DIODE GEN PURP 660V 2A D5A | Current - Reverse Leakage @ Vr | 1.4V @ 1.2A |
| Current - Average Rectified (Io) (per Diode) | 660V | Capacitance @ Vr, F | -65°C ~ 150°C |
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