JAN1N649-1
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See Product Specifications for product details.
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See Product Specifications for product details.
Buy JAN1N649-1 with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | JAN1N649-1 |
|---|---|
| Manufacturer | Microsemi Corporation |
| Description | DIODE GEN PURP 600V 400MA DO35 |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | JAN1N649-1 | Manufacturer | Microsemi Corporation |
|---|---|---|---|
| Description | DIODE GEN PURP 600V 400MA DO35 | Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Quantity Available | 4148 pcs | Data sheet | 1N649-1 |
| Category | Discrete Semiconductor Products | Voltage - Peak Reverse (Max) | Standard |
| Voltage - Forward (Vf) (Max) @ If | 400mA | Voltage - Breakdown | DO-35 |
| Series | Military, MIL-PRF-19500/240 | RoHS Status | Bulk |
| Reverse Recovery Time (trr) | Standard Recovery >500ns, > 200mA (Io) | Resistance @ If, F | - |
| Polarization | DO-204AH, DO-35, Axial | Other Names | 1086-15995 1086-15995-MIL |
| Mounting Type | Through Hole | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | JAN1N649-1 | Expanded Description | Diode Standard 600V 400mA Through Hole DO-35 |
| Diode Configuration | 50nA @ 600V | Description | DIODE GEN PURP 600V 400MA DO35 |
| Current - Reverse Leakage @ Vr | 1V @ 400mA | Current - Average Rectified (Io) (per Diode) | 600V |
| Capacitance @ Vr, F | -65°C ~ 175°C |
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