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Home > Products > Integrated Circuits (ICs) > Memory > NAND04GW3C2BN6E

NAND04GW3C2BN6E

NAND04GW3C2BN6E

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Part Number	NAND04GW3C2BN6E
Manufacturer	Micron Technology
Description	IC FLASH 4G PARALLEL 48TSOP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 11661 pcs
Reference Price (In US Dollars)	576 pcs
Reference Price (In US Dollars)	$3.229

Product parameter

Product parameter

Part Number	NAND04GW3C2BN6E	Manufacturer	Micron Technology
Description	IC FLASH 4G PARALLEL 48TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	11661 pcs	Data sheet
Category	Integrated Circuits (ICs)	Write Cycle Time - Word, Page	25ns
Voltage - Supply	2.7 V ~ 3.6 V	Technology	FLASH - NAND
Supplier Device Package	48-TSOP	Series	-
Packaging	Tray	Package / Case	48-TFSOP (0.724", 18.40mm Width)
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	3 (168 Hours)	Memory Type	Non-Volatile
Memory Size	4Gb (512M x 8)	Memory Interface	Parallel
Memory Format	FLASH	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Detailed Description	FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 25ns 48-TSOP	Base Part Number	NAND04G
Access Time	25ns

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