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Home > Products > Integrated Circuits (ICs) > Memory > MT29RZ4B2DZZHGSK-18 W.80E

MT29RZ4B2DZZHGSK-18 W.80E

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Part Number	MT29RZ4B2DZZHGSK-18 W.80E
Manufacturer	Micron Technology
Description	IC FLASH RAM 4G PARALLEL 533MHZ
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 15440 pcs
Reference Price (In US Dollars)	1000 pcs
Reference Price (In US Dollars)	$2.481

Product parameter

Product parameter

Part Number	MT29RZ4B2DZZHGSK-18 W.80E	Manufacturer	Micron Technology
Description	IC FLASH RAM 4G PARALLEL 533MHZ	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	15440 pcs	Data sheet
Category	Integrated Circuits (ICs)	Write Cycle Time - Word, Page	-
Voltage - Supply	1.8V	Technology	FLASH - NAND, DRAM - LPDDR2
Series	-	Other Names	MT29RZ4B2DZZHGSK-18 W.80E-ND MT29RZ4B2DZZHGSK-18W.80E
Operating Temperature	-25°C ~ 85°C (TA)	Moisture Sensitivity Level (MSL)	3 (168 Hours)
Memory Type	Non-Volatile	Memory Size	4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDDR2)
Memory Interface	Parallel	Memory Format	FLASH, RAM
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDDR2) Parallel 533MHz
Clock Frequency	533MHz

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