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Home > Products > Integrated Circuits (ICs) > Memory > MT29F256G08EECBBJ4-10ES:B TR

MT29F256G08EECBBJ4-10ES:B TR

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Part Number MT29F256G08EECBBJ4-10ES:B TR
Manufacturer Micron Technology
Description IC FLASH 256G PARALLEL 100MHZ
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5051 pcs
Reference Price
(In US Dollars)		1000 pcs
$5.918

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$5.918

Product parameter

Part Number MT29F256G08EECBBJ4-10ES:B TR Manufacturer Micron Technology
Description IC FLASH 256G PARALLEL 100MHZ Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5051 pcs Data sheet
Category Integrated Circuits (ICs) Write Cycle Time - Word, Page -
Voltage - Supply 2.7 V ~ 3.6 V Technology FLASH - NAND
Series - Packaging Tape & Reel (TR)
Other Names MT29F256G08EECBBJ4-10ES:B TR-ND
MT29F256G08EECBBJ4-10ES:BTR		 Operating Temperature 0°C ~ 70°C (TA)
Moisture Sensitivity Level (MSL) 3 (168 Hours) Memory Type Non-Volatile
Memory Size 256Gb (32G x 8) Memory Interface Parallel
Memory Format FLASH Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 100MHz Clock Frequency 100MHz

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