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Home > Products > Integrated Circuits (ICs) > Memory > EDB5432BEBH-1DAAT-F-R TR

EDB5432BEBH-1DAAT-F-R TR

EDB5432BEBH-1DAAT-F-R TR
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Part Number EDB5432BEBH-1DAAT-F-R TR
Manufacturer Micron Technology
Description IC DRAM 512M PARALLEL 134VFBGA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 18629 pcs
Reference Price
(In US Dollars)		1000 pcs
$1.989

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$1.989

Product parameter

Part Number EDB5432BEBH-1DAAT-F-R TR Manufacturer Micron Technology
Description IC DRAM 512M PARALLEL 134VFBGA Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 18629 pcs Data sheet EDB5432BE(BH,PA)
Category Integrated Circuits (ICs) Write Cycle Time - Word, Page -
Voltage - Supply 1.14 V ~ 1.95 V Technology SDRAM - Mobile LPDDR2
Supplier Device Package 134-VFBGA (10x11.5) Series -
Packaging Tape & Reel (TR) Package / Case 134-VFBGA
Other Names EDB5432BEBH-1DAAT-F-R
EDB5432BEBH-1DAAT-F-R TR-ND
EDB5432BEBH-1DAAT-F-R-ND
EDB5432BEBH-1DAAT-F-RTR		 Operating Temperature -40°C ~ 105°C (TC)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 3 (168 Hours)
Memory Type Volatile Memory Size 512Mb (16M x 32)
Memory Interface Parallel Memory Format DRAM
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) Parallel 533MHz 134-VFBGA (10x11.5)
Clock Frequency 533MHz

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