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Home > Products > Integrated Circuits (ICs) > Memory > DS1230AB-200IND

DS1230AB-200IND

DS1230AB-200IND

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Part Number	DS1230AB-200IND
Manufacturer	Maxim Integrated
Description	IC NVSRAM 256K PARALLEL 28EDIP
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant

~~In Stock~~ 4314 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	DS1230AB-200IND	Manufacturer	Maxim Integrated
Description	IC NVSRAM 256K PARALLEL 28EDIP	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4314 pcs	Data sheet	DS1230Y, AB
Category	Integrated Circuits (ICs)	Write Cycle Time - Word, Page	200ns
Voltage - Supply	4.75 V ~ 5.25 V	Technology	NVSRAM (Non-Volatile SRAM)
Supplier Device Package	28-EDIP	Series	-
Packaging	Tube	Package / Case	28-DIP Module (0.600", 15.24mm)
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Memory Type	Non-Volatile
Memory Size	256Kb (32K x 8)	Memory Interface	Parallel
Memory Format	NVSRAM	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Detailed Description	NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 200ns 28-EDIP	Base Part Number	DS1230AB
Access Time	200ns

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