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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > UMH1NTN

UMH1NTN

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Part Number UMH1NTN
Manufacturer LAPIS Semiconductor
Description TRANS 2NPN PREBIAS 0.15W UMT6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1026149 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs15000 pcs30000 pcs75000 pcs
$0.031$0.029$0.027$0.025$0.023

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Product parameter

Part Number UMH1NTN Manufacturer LAPIS Semiconductor
Description TRANS 2NPN PREBIAS 0.15W UMT6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1026149 pcs Data sheet UMT6 TN Taping SpecEMH1, UMH1N, IMH1A
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package UMT6 Series -
Resistor - Emitter Base (R2) 22 kOhms Resistor - Base (R1) 22 kOhms
Power - Max 150mW Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363 Other Names UMH1NTN-ND
UMH1NTNTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number *MH1

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