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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RW1E025RPT2CR

RW1E025RPT2CR

RW1E025RPT2CR
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Part Number RW1E025RPT2CR
Manufacturer LAPIS Semiconductor
Description MOSFET P-CH 30V 2.5A WEMT6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 699182 pcs
Reference Price
(In US Dollars)
8000 pcs
$0.032

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Target Price:(USD)
Quantity:
Total:
$0.032

Product parameter

Part Number RW1E025RPT2CR Manufacturer LAPIS Semiconductor
Description MOSFET P-CH 30V 2.5A WEMT6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 699182 pcs Data sheet RW1E025RP
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 6-WEMT Series -
Rds On (Max) @ Id, Vgs 75 mOhm @ 2.5A, 10V Power Dissipation (Max) 700mW (Ta)
Packaging Tape & Reel (TR) Package / Case SOT-563, SOT-666
Other Names RW1E025RPT2CRTR Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V FET Type P-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Drain to Source Voltage (Vdss) 30V Detailed Description P-Channel 30V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)

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