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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > IMB7AT108

IMB7AT108

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Part Number	IMB7AT108
Manufacturer	LAPIS Semiconductor
Description	TRANS 2PNP PREBIAS 0.3W SOT457
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 472450 pcs
Reference Price (In US Dollars)	3000 pcs
Reference Price (In US Dollars)	$0.047

Product parameter
Data sheet

Product parameter

Part Number	IMB7AT108	Manufacturer	LAPIS Semiconductor
Description	TRANS 2PNP PREBIAS 0.3W SOT457	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	472450 pcs	Data sheet	IMB7A
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	Transistor Type	2 PNP - Pre-Biased (Dual)
Supplier Device Package	SOT-457	Series	-
Resistor - Emitter Base (R2)	-	Resistor - Base (R1)	4.7 kOhms
Power - Max	300mW	Packaging	Tape & Reel (TR)
Package / Case	SOT-457	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	-	Detailed Description	Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-457
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V	Current - Collector Cutoff (Max)	-
Current - Collector (Ic) (Max)	100mA

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