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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > IMB10AT110

IMB10AT110

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Part Number	IMB10AT110
Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS DUAL PNP SMT6
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 702922 pcs
Reference Price (In US Dollars)	3000 pcs	6000 pcs	15000 pcs	30000 pcs
Reference Price (In US Dollars)	$0.039	$0.037	$0.034	$0.032

Product parameter
Data sheet

Product parameter

Part Number	IMB10AT110	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS DUAL PNP SMT6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	702922 pcs	Data sheet	SMT6 T110 Taping Spec EMB10, UMB10N, IMB10A
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	Transistor Type	2 PNP - Pre-Biased (Dual)
Supplier Device Package	SMT6	Series	-
Resistor - Emitter Base (R2)	47 kOhms	Resistor - Base (R1)	2.2 kOhms
Power - Max	300mW	Packaging	Tape & Reel (TR)
Package / Case	SC-74, SOT-457	Other Names	IMB10AT110TR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA	Base Part Number	MB10

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