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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMH10FHAT2R

EMH10FHAT2R

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Part Number	EMH10FHAT2R
Manufacturer	LAPIS Semiconductor
Description	NPN+NPN DIGITAL TRANSISTOR (CORR
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 1266907 pcs
Reference Price (In US Dollars)	8000 pcs
Reference Price (In US Dollars)	$0.02

Product parameter
Data sheet

Product parameter

Part Number	EMH10FHAT2R	Manufacturer	LAPIS Semiconductor
Description	NPN+NPN DIGITAL TRANSISTOR (CORR	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1266907 pcs	Data sheet	EMT6 T2R Taping Spec EMH10FHA
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	-
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	Transistor Type	2 NPN - Pre-Biased (Dual)
Supplier Device Package	EMT6	Series	Automotive, AEC-Q101
Resistor - Emitter Base (R2)	47 kOhms	Resistor - Base (R1)	2.2 kOhms
Power - Max	150mW	Packaging	Tape & Reel (TR)
Package / Case	SOT-563, SOT-666	Other Names	EMH10FHAT2RTR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	7 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	Current - Collector Cutoff (Max)	-
Current - Collector (Ic) (Max)	100mA

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