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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMB10T2R

EMB10T2R

EMB10T2R
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See Product Specifications for product details.
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Part Number EMB10T2R
Manufacturer LAPIS Semiconductor
Description TRANS 2PNP PREBIAS 0.15W EMT6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 558342 pcs
Reference Price
(In US Dollars)
8000 pcs
$0.036

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Target Price:(USD)
Quantity:
Total:
$0.036

Product parameter

Part Number EMB10T2R Manufacturer LAPIS Semiconductor
Description TRANS 2PNP PREBIAS 0.15W EMT6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 558342 pcs Data sheet EMT6 T2R Taping SpecEMB10, UMB10N, IMB10A
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package EMT6 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 150mW Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Other Names EMB10T2R-ND
EMB10T2RTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number MB10

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