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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTC363EUT106

DTC363EUT106

DTC363EUT106
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Part Number DTC363EUT106
Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 200MW UMT3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4707 pcs
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Part Number DTC363EUT106 Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 200MW UMT3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4707 pcs Data sheet DTC363EU/EK/ES
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 20V
Vce Saturation (Max) @ Ib, Ic 80mV @ 2.5mA, 50mA Transistor Type NPN - Pre-Biased
Supplier Device Package UMT3 Series -
Resistor - Emitter Base (R2) 6.8 kOhms Resistor - Base (R1) 6.8 kOhms
Power - Max 200mW Packaging Tape & Reel (TR)
Package / Case SC-70, SOT-323 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 600mA 200MHz 200mW Surface Mount UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 600mA Base Part Number DTC363

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