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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTC114GUAT106

DTC114GUAT106

DTC114GUAT106
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number DTC114GUAT106
Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 200MW UMT3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 3824023 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs15000 pcs
$0.013$0.011$0.01
30000 pcs75000 pcs150000 pcs
$0.009$0.008$0.007

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$0.013

Product parameter

Part Number DTC114GUAT106 Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 200MW UMT3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3824023 pcs Data sheet DTC114GUMT3 T106 Taping Spec
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package UMT3 Series -
Resistor - Emitter Base (R2) 10 kOhms Power - Max 200mW
Packaging Tape & Reel (TR) Package / Case SC-70, SOT-323
Other Names DTC114GUAT106-ND
DTC114GUAT106TR		 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V Current - Collector Cutoff (Max) 500nA (ICBO)
Current - Collector (Ic) (Max) 100mA Base Part Number DTC114

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