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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTC114EBT2L

DTC114EBT2L

DTC114EBT2L
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Part Number DTC114EBT2L
Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 150MW VMT3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5627 pcs
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Product parameter

Part Number DTC114EBT2L Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 150MW VMT3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5627 pcs Data sheet
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package VMN3 Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 150mW Packaging Tape & Reel (TR)
Package / Case SOT-923F Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VMN3
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number DTC114

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