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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > BSM120D12P2C005

BSM120D12P2C005

BSM120D12P2C005
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Part Number BSM120D12P2C005
Manufacturer LAPIS Semiconductor
Description MOSFET 2N-CH 1200V 120A MODULE
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 298 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs
$138.819$132.118

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$138.819

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Part Number BSM120D12P2C005 Manufacturer LAPIS Semiconductor
Description MOSFET 2N-CH 1200V 120A MODULE Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 298 pcs Data sheet C Type Taping SpecBSM120D12P2C005Power Devices, NE Handbook Series
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.7V @ 22mA
Supplier Device Package Module Series -
Rds On (Max) @ Id, Vgs - Power - Max 780W
Packaging Bulk Package / Case Module
Operating Temperature -40°C ~ 150°C (TJ) Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 32 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V Gate Charge (Qg) (Max) @ Vgs -
FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV) Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 120A (Tc) 780W Module
Current - Continuous Drain (Id) @ 25°C 120A (Tc)

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