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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SPB35N10 G

SPB35N10 G

SPB35N10 G
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Part Number SPB35N10 G
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 35A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5616 pcs
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Part Number SPB35N10 G Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 35A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5616 pcs Data sheet SP(I,P,B)35N10
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 83µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3-2 Series SIPMOS®
Rds On (Max) @ Id, Vgs 44 mOhm @ 26.4A, 10V Power Dissipation (Max) 150W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names SP000102172
SPB35N10 G-ND
SPB35N10G
SPB35N10GXT
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 35A (Tc) 150W (Tc) Surface Mount PG-TO263-3-2
Current - Continuous Drain (Id) @ 25°C 35A (Tc)

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