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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF630NLPBF

IRF630NLPBF

IRF630NLPBF
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Part Number IRF630NLPBF
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 200V 9.3A TO-262
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5814 pcs
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Part Number IRF630NLPBF Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 200V 9.3A TO-262 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5814 pcs Data sheet IRF630N
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-262 Series HEXFET®
Rds On (Max) @ Id, Vgs 300 mOhm @ 5.4A, 10V Power Dissipation (Max) 82W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names *IRF630NLPBF
SP001559690
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V Detailed Description N-Channel 200V 9.3A (Tc) 82W (Tc) Through Hole TO-262
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)

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