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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF1902PBF

IRF1902PBF

IRF1902PBF
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Part Number IRF1902PBF
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 20V 4.2A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4438 pcs
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Part Number IRF1902PBF Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 20V 4.2A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4438 pcs Data sheet IRF1902PbF
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 700mV @ 250µA
Vgs (Max) ±12V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO Series HEXFET®
Rds On (Max) @ Id, Vgs 85 mOhm @ 4A, 4.5V Power Dissipation (Max) 2.5W (Ta)
Packaging Tube Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names *IRF1902PBF
SP001550948		 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 310pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Drain to Source Voltage (Vdss) 20V Detailed Description N-Channel 20V 4.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)

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