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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPW65R190E6FKSA1

IPW65R190E6FKSA1

IPW65R190E6FKSA1
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Part Number IPW65R190E6FKSA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 650V 20.2A TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4378 pcs
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Part Number IPW65R190E6FKSA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 650V 20.2A TO247 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4378 pcs Data sheet IPx65R190E6
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 730µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO247-3 Series CoolMOS™
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.3A, 10V Power Dissipation (Max) 151W (Tc)
Packaging Tube Package / Case TO-247-3
Other Names IPW65R190E6
IPW65R190E6-ND
SP000863906
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V Detailed Description N-Channel 650V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)

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