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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPSH4N03LA G

IPSH4N03LA G

IPSH4N03LA G
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Part Number IPSH4N03LA G
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 25V 90A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4749 pcs
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Part Number IPSH4N03LA G Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 25V 90A IPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4749 pcs Data sheet IPD,IPSH4N03LA G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2V @ 40µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO251-3 Series OptiMOS™
Rds On (Max) @ Id, Vgs 4.4 mOhm @ 60A, 10V Power Dissipation (Max) 94W (Tc)
Packaging Tube Package / Case TO-251-3 Stub Leads, IPak
Other Names IPSH4N03LA G-ND
IPSH4N03LAG
IPSH4N03LAGX
SP000016331
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 3 (168 Hours)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 25V Detailed Description N-Channel 25V 90A (Tc) 94W (Tc) Through Hole PG-TO251-3
Current - Continuous Drain (Id) @ 25°C 90A (Tc)

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