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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPP080N06N G

IPP080N06N G

IPP080N06N G
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Part Number IPP080N06N G
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 60V 80A TO-220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4949 pcs
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Part Number IPP080N06N G Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 60V 80A TO-220 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4949 pcs Data sheet IPB,IPP080N06N G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 150µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO220-3-1 Series OptiMOS™
Rds On (Max) @ Id, Vgs 8 mOhm @ 80A, 10V Power Dissipation (Max) 214W (Tc)
Packaging Tube Package / Case TO-220-3
Other Names IPP080N06N G-ND
IPP080N06NG
IPP080N06NGX
IPP080N06NGXK
SP000204173
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 3 (168 Hours)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V Detailed Description N-Channel 60V 80A (Tc) 214W (Tc) Through Hole PG-TO220-3-1
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

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