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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPP023NE7N3 G

IPP023NE7N3 G

IPP023NE7N3 G
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Part Number IPP023NE7N3 G
Manufacturer Infineon Technologies
Description MOSFET N-CH 75V 120A TO220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5641 pcs
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Part Number IPP023NE7N3 G Manufacturer Infineon Technologies
Description MOSFET N-CH 75V 120A TO220 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5641 pcs Data sheet IPP023NE7N3 G, IPI023NE7N3 G
Category Discrete Semiconductor Products Voltage - Test 14400pF @ 37.5V
Voltage - Breakdown - Vgs(th) (Max) @ Id 2.3 mOhm @ 100A, 10V
Technology MOSFET (Metal Oxide) Series OptiMOS™
RoHS Status Cut Tape (CT) Rds On (Max) @ Id, Vgs 120A (Tc)
Polarization TO-220-3 Other Names IPP023NE7N3 GCT
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Part Number IPP023NE7N3 G
Input Capacitance (Ciss) (Max) @ Vds 206nC @ 10V Gate Charge (Qg) (Max) @ Vgs 3.8V @ 273µA
FET Feature N-Channel Expanded Description N-Channel 75V 120A (Tc) 300W (Tc) Through Hole
Drain to Source Voltage (Vdss) - Description MOSFET N-CH 75V 120A TO220
Current - Continuous Drain (Id) @ 25°C 75V Capacitance Ratio 300W (Tc)

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