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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI80N06S3L06XK

IPI80N06S3L06XK

IPI80N06S3L06XK
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Part Number IPI80N06S3L06XK
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 55V 80A TO-262
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4814 pcs
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Part Number IPI80N06S3L06XK Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 55V 80A TO-262 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4814 pcs Data sheet IPB(I,P)80N06S3L-06
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.2V @ 80µA
Vgs (Max) ±16V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3 Series OptiMOS™
Rds On (Max) @ Id, Vgs 5.9 mOhm @ 56A, 10V Power Dissipation (Max) 136W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names IPI80N06S3L-06
IPI80N06S3L-06-ND
IPI80N06S3L-06IN
IPI80N06S3L-06IN-ND
IPI80N06S3L06X
SP000088002
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 9417pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Drain to Source Voltage (Vdss) 55V Detailed Description N-Channel 55V 80A (Tc) 136W (Tc) Through Hole PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

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