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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI120N06S4H1AKSA1

IPI120N06S4H1AKSA1

IPI120N06S4H1AKSA1
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Part Number IPI120N06S4H1AKSA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 60V 120A TO262-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 6004 pcs
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Part Number IPI120N06S4H1AKSA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 60V 120A TO262-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 6004 pcs Data sheet IPx120N06S4-H1
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 200µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3-1 Series OptiMOS™
Rds On (Max) @ Id, Vgs 2.4 mOhm @ 100A, 10V Power Dissipation (Max) 250W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names IPI120N06S4-H1
IPI120N06S4-H1-ND
SP000415620
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 21900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V Detailed Description N-Channel 60V 120A (Tc) 250W (Tc) Through Hole PG-TO262-3-1
Current - Continuous Drain (Id) @ 25°C 120A (Tc)

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