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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI110N20N3GAKSA1

IPI110N20N3GAKSA1

IPI110N20N3GAKSA1
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Part Number IPI110N20N3GAKSA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 200V 88A TO262-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 20534 pcs
Reference Price
(In US Dollars)
500 pcs
$1.633

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Target Price:(USD)
Quantity:
Total:
$1.633

Product parameter

Part Number IPI110N20N3GAKSA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 200V 88A TO262-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 20534 pcs Data sheet IPx(107,110)N20N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 270µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3 Series OptiMOS™
Rds On (Max) @ Id, Vgs 11 mOhm @ 88A, 10V Power Dissipation (Max) 300W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names IPI110N20N3 G
IPI110N20N3 G-ND
IPI110N20N3G
SP000714304
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V Detailed Description N-Channel 200V 88A (Tc) 300W (Tc) Through Hole PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 88A (Tc)

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