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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI086N10N3GXKSA1

IPI086N10N3GXKSA1

IPI086N10N3GXKSA1
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number IPI086N10N3GXKSA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 80A TO262-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 83637 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.622$0.551$0.436$0.338$0.267

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Target Price:(USD)
Quantity:
Total:
$0.622

Product parameter

Part Number IPI086N10N3GXKSA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 80A TO262-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 83637 pcs Data sheet IPx08xN10N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 75µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3 Series OptiMOS™
Rds On (Max) @ Id, Vgs 8.6 mOhm @ 73A, 10V Power Dissipation (Max) 125W (Tc)
Packaging Tube Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names IPI086N10N3 G
IPI086N10N3 G-ND
IPI086N10N3G
SP000485982
SP000683070
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

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