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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD65R650CEATMA1

IPD65R650CEATMA1

IPD65R650CEATMA1
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Part Number IPD65R650CEATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 650V 10.1A TO252
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5948 pcs
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Part Number IPD65R650CEATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 650V 10.1A TO252 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5948 pcs Data sheet IPA65R650CE, IPD65R650CE
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 0.21mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3 Series CoolMOS™
Rds On (Max) @ Id, Vgs 650 mOhm @ 2.1A, 10V Power Dissipation (Max) 86W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names SP001295798 Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V FET Type N-Channel
FET Feature Super Junction Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V Detailed Description N-Channel 650V 10.1A (Tc) 86W (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25°C 10.1A (Tc)

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