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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD50R650CEATMA1

IPD50R650CEATMA1

IPD50R650CEATMA1
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Part Number IPD50R650CEATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N CH 500V 6.1A PG-TO252
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 6015 pcs
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Part Number IPD50R650CEATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N CH 500V 6.1A PG-TO252 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 6015 pcs Data sheet IPD50R650CE
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 150µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3 Series CoolMOS™ CE
Rds On (Max) @ Id, Vgs 650 mOhm @ 1.8A, 13V Power Dissipation (Max) 69W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names IPD50R650CEATMA1-ND
IPD50R650CEATMA1TR
SP001117708
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 3 (168 Hours)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 342pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 13V
Drain to Source Voltage (Vdss) 500V Detailed Description N-Channel 500V 6.1A (Tc) 69W (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25°C 6.1A (Tc)

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