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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD33CN10NGATMA1

IPD33CN10NGATMA1

IPD33CN10NGATMA1
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number IPD33CN10NGATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 27A TO252-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 123781 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.451$0.399$0.315$0.244$0.193

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Target Price:(USD)
Quantity:
Total:
$0.451

Product parameter

Part Number IPD33CN10NGATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 27A TO252-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 123781 pcs Data sheet IPx3xCN10N G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 29µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3 Series OptiMOS™
Rds On (Max) @ Id, Vgs 33 mOhm @ 27A, 10V Power Dissipation (Max) 58W (Tc)
Packaging Cut Tape (CT) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names IPD33CN10NGATMA1CT Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 3 (168 Hours)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 27A (Tc) 58W (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25°C 27A (Tc)

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