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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB80N08S2L07ATMA1

IPB80N08S2L07ATMA1

IPB80N08S2L07ATMA1
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Part Number IPB80N08S2L07ATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 75V 80A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 42938 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs
$1.238$1.12$0.90$0.70

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Target Price:(USD)
Quantity:
Total:
$1.238

Product parameter

Part Number IPB80N08S2L07ATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 75V 80A TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 42938 pcs Data sheet IPB,IPP80N08S2L-07
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3-2 Series OptiMOS™
Rds On (Max) @ Id, Vgs 6.8 mOhm @ 80A, 10V Power Dissipation (Max) 300W (Tc)
Packaging Cut Tape (CT) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB80N08S2L-07CT
IPB80N08S2L-07CT-ND
IPB80N08S2L07ATMA1CT
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 233nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 75V Detailed Description N-Channel 75V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

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