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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB60R099C6ATMA1

IPB60R099C6ATMA1

IPB60R099C6ATMA1
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Part Number IPB60R099C6ATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 600V 37.9A TO263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 22743 pcs
Reference Price
(In US Dollars)
1000 pcs
$1.322

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Target Price:(USD)
Quantity:
Total:
$1.322

Product parameter

Part Number IPB60R099C6ATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 600V 37.9A TO263 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 22743 pcs Data sheet IPx60R099C6
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 1.21mA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series CoolMOS™
Rds On (Max) @ Id, Vgs 99 mOhm @ 18.1A, 10V Power Dissipation (Max) 278W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB60R099C6
IPB60R099C6-ND
IPB60R099C6ATMA1TR
IPB60R099C6TR-ND
SP000687468
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 119nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 37.9A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 37.9A (Tc)

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