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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB26CN10NGATMA1

IPB26CN10NGATMA1

IPB26CN10NGATMA1
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Part Number IPB26CN10NGATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 35A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5134 pcs
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Part Number IPB26CN10NGATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 35A TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5134 pcs Data sheet IPx25,26CN10N G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 39µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series OptiMOS™
Rds On (Max) @ Id, Vgs 26 mOhm @ 35A, 10V Power Dissipation (Max) 71W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB26CN10N G
IPB26CN10N G-ND
IPB26CN10NGATMA1TR
SP000277692
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 35A (Tc) 71W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 35A (Tc)

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