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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB123N10N3GATMA1

IPB123N10N3GATMA1

IPB123N10N3GATMA1
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Part Number IPB123N10N3GATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 58A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 64166 pcs
Reference Price
(In US Dollars)
1000 pcs
$0.334

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Quantity:
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$0.334

Product parameter

Part Number IPB123N10N3GATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 100V 58A TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 64166 pcs Data sheet IPB123N10N3G, (IPP,IPI)126N10N3
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 46µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series OptiMOS™
Rds On (Max) @ Id, Vgs 12.3 mOhm @ 46A, 10V Power Dissipation (Max) 94W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB123N10N3 G
IPB123N10N3 G-ND
IPB123N10N3 GTR
IPB123N10N3 GTR-ND
IPB123N10N3G
IPB123N10N3GATMA1TR
SP000485968
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 58A (Tc) 94W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 58A (Tc)

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