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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB107N20N3GATMA1

IPB107N20N3GATMA1

IPB107N20N3GATMA1
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Part Number IPB107N20N3GATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 200V 88A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 23125 pcs
Reference Price
(In US Dollars)
1000 pcs
$1.434

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Quantity:
Total:
$1.434

Product parameter

Part Number IPB107N20N3GATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 200V 88A TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 23125 pcs Data sheet IPB107N20N3 G,IPx110N20N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 270µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series OptiMOS™
Rds On (Max) @ Id, Vgs 10.7 mOhm @ 88A, 10V Power Dissipation (Max) 300W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB107N20N3 G
IPB107N20N3 G-ND
IPB107N20N3 GTR
IPB107N20N3 GTR-ND
IPB107N20N3G
IPB107N20N3GATMA1TR
SP000676406
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V Detailed Description N-Channel 200V 88A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 88A (Tc)

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