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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB085N06L G

IPB085N06L G

IPB085N06L G
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Part Number IPB085N06L G
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 60V 80A TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4796 pcs
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Part Number IPB085N06L G Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 60V 80A TO-263 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4796 pcs Data sheet IPB,IPP085N06L G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2V @ 125µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3-2 Series OptiMOS™
Rds On (Max) @ Id, Vgs 8.2 mOhm @ 80A, 10V Power Dissipation (Max) 188W (Tc)
Packaging Cut Tape (CT) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB085N06LG
IPB085N06LGINCT
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60V Detailed Description N-Channel 60V 80A (Tc) 188W (Tc) Surface Mount PG-TO263-3-2
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

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