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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB029N06N3GE8187ATMA1

IPB029N06N3GE8187ATMA1

IPB029N06N3GE8187ATMA1
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Part Number IPB029N06N3GE8187ATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 60V 120A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 78362 pcs
Reference Price
(In US Dollars)
1000 pcs
$0.403

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Target Price:(USD)
Quantity:
Total:
$0.403

Product parameter

Part Number IPB029N06N3GE8187ATMA1 Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET N-CH 60V 120A TO263-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 78362 pcs Data sheet Ipx0(29,32)N06N3 G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 118µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series OptiMOS™
Rds On (Max) @ Id, Vgs 3.2 mOhm @ 100A, 10V Power Dissipation (Max) 188W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names IPB029N06N3 G E8187
IPB029N06N3 G E8187-ND
IPB029N06N3GE8187ATMA1TR
SP000939334
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V Detailed Description N-Channel 60V 120A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)

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